发明名称 |
Method for vapour deposition of a film onto a substrate |
摘要 |
Method for chemical vapor deposition of a film onto a substrate. Before bulk chemical vapor deposition the substrate is subjected to a nucleation treatment. The nucleation treatment comprises atomic layer deposition wherein the substrate is alternatingly and sequentially exposed to pulses of at least two mutually reactive gaseous reactants wherein the nucleation temperature is chosen to prevent condensation of either of the used reactants and to prevent substantial thermal decomposition of each of the reactants individually.
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申请公布号 |
US6592942(B1) |
申请公布日期 |
2003.07.15 |
申请号 |
US20000611602 |
申请日期 |
2000.07.07 |
申请人 |
ASM INTERNATIONAL N.V. |
发明人 |
VAN WIJCK MARGREET ALBERTINE ANNE-MARIE |
分类号 |
C23C16/44;C23C16/02;H01L21/285;H01L21/316;(IPC1-7):C23C16/40;C23C16/455;C23C23/06 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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