发明名称 |
High speed silicon photodiode |
摘要 |
A high-speed silicon photodiode and method of manufacture include a first layer of silicon having thickness in a range of about 125 mum to about 550 mum. A second layer of silicon has a thickness in a range of about 3 mum to about 16 mum and a resistivity of at least about 500 ohm-cm. This first layer is doped with a second type of impurity. In an alternative aspect, a high-speed silicon photodiode and method of manufacture includes a silicon wafer doped with a first type of impurity. On a first side of the wafer a doping of a second type is applied in an active area of a photodiode. On the reverse of the wafer a volume of silicon is etched away and the resulting trench is coated with a conductor. The wafer may also exhibit a high resistivity of at least about 500 ohm-cm. In each aspect, a reverse bias not exceeding about 3.3 volts permits operation with a frequency response of at least 750 MHz.
|
申请公布号 |
US6593636(B1) |
申请公布日期 |
2003.07.15 |
申请号 |
US20000730896 |
申请日期 |
2000.12.05 |
申请人 |
UDT SENSORS, INC. |
发明人 |
BUI PETER STEVEN;TANEJA NARAYAN DASS |
分类号 |
H01L31/028;H01L31/0352;H01L31/103;(IPC1-7):H01L31/028;H01L31/035 |
主分类号 |
H01L31/028 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|