发明名称 METHOD FOR FORMING PHOTOCATALYST FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for forming a photocatalyst film which has photocatalyst performance of high sensitivity. <P>SOLUTION: In this method for forming the photocatalyst film, an SiO<SB>2</SB>film is laminated on a TiO<SB>2</SB>film by sputtering in vacuum. When the SiO<SB>2</SB>film is formed, an Si target containing a specified metallic additive is used and the sputtering is performed. In such a case, for example, nickel (Ni), copper (Cu) and tungsten (W) are preferably used as the metallic additive. It is preferable that the amount of the metallic additive contained in the Si target is 10<SP>-2</SP>-10<SP>-4</SP>wt.%. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003200058(A) 申请公布日期 2003.07.15
申请号 JP20020004423 申请日期 2002.01.11
申请人 ULVAC JAPAN LTD 发明人 IIJIMA MASAYUKI;TAKAGI KENICHI;HARA HIDEAKI
分类号 B01D53/86;B01J21/08;B01J35/02;B01J37/00;B01J37/02;C23C14/10 主分类号 B01D53/86
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