Method of controlling a shape of an oxide layer formed on a substrate

摘要

A method of forming an oxide layer on a substrate comprises deposition of a mask layer with an opening for defining the area where the oxide layer is to be formed, and an ion implantation step performed with a tilt angle so as to obtain a varying ion concentration. In a subsequent single oxidation step, an oxide layer is formed having a thickness that varies in conformity with the ion concentration. This method may advantageously be applied to the formation of a gate insulation layer in a field effect transistor.