Semiconductor device in which MPU and DRAM as secondary cache memory are mounted on same chip to easily realize high speed of cycle time under restriction on chip size

摘要

A semiconductor device includes an MPU (Micro Processing Unit) section, a DRAM (Dynamic Random Access Memory) section, a plurality of address registers, and a plurality of address delay compensating units. The MPU section is provided on a chip to output a clock signal and an address signal. The DRAM section is provided on the chip to input the clock signal and the address signal. Each of the plurality of address registers latches the address signal in response to the clock signal. Each of the plurality of address delay compensating units is provided in a previous stage to the plurality of address registers and compensates for an address signal transmission delay time such that the address signal transmission delay time falls within a predetermined range. The address signal transmission delay time indicates a time elapsed before the each address register inputs the address signal after the MPU section outputs the address signal.