发明名称 |
Structure and method for forming a body contact for vertical transistor cells |
摘要 |
A semiconductor memory cell, in accordance with the present invention includes a deep trench formed in a substrate. The deep trench includes a storage node in a lower portion of the deep trench, and a gate conductor formed in an upper portion of the deep trench. The gate conductor is electrically isolated from the storage node. An active area is formed adjacent to the deep trench and is formed in the substrate to provide a channel region of an access transistor of the memory cell. A buried strap is formed to electrically connect the storage node to the active area when the gate conductor is activated. A body contact is formed opposite the deep trench in the active area and corresponding in position to the buried strap to prevent floating body effects due to outdiffusion of the buried strap. Methods for forming the body contact are also described.
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申请公布号 |
US6593612(B2) |
申请公布日期 |
2003.07.15 |
申请号 |
US20000730150 |
申请日期 |
2000.12.05 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
GRUENING ULRIKE;KLOSE HELMUT;BERGNER WOLFGANG |
分类号 |
H01L21/8242;(IPC1-7):H01L27/108;H01L29/94;H01L31/119;H01L29/76 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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