发明名称 |
Semiconductor substrate, semiconductor device and method of manufacturing the same |
摘要 |
A sapphire substrate, a buffer layer of undoped GaN and a compound semiconductor crystal layer successively formed on the sapphire substrate together form a substrate of a light emitting diode. A first cladding layer of n-type GaN, an active layer of undoped In0.2Ga0.8N and a second cladding layer successively formed on the compound semiconductor crystal layer together form a device structure of the light emitting diode. On the second cladding layer, a p-type electrode is formed, and on the first cladding layer, an n-type electrode is formed. In a part of the sapphire substrate opposing the p-type electrode, a recess having a trapezoidal section is formed, so that the thickness of an upper portion of the sapphire substrate above the recess can be substantially equal to or smaller than the thickness of the compound semiconductor crystal layer.
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申请公布号 |
US6593159(B1) |
申请公布日期 |
2003.07.15 |
申请号 |
US20000532063 |
申请日期 |
2000.03.21 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HASHIMOTO TADAO;IMAFUJI OSAMU;YURI MASAAKI;ISHIDA MASAHIRO |
分类号 |
C30B25/18;H01L33/00;H01S5/02;H01S5/323;(IPC1-7):H01L21/00 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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