发明名称 |
Method for manufacturing a low dielectric constant stop layer for integrated circuit interconnects |
摘要 |
An integrated circuit and manufacturing method therefor is provided having a semiconductor substrate with a semiconductor device and a device dielectric layer formed on the semiconductor substrate. A channel dielectric layer on the device dielectric layer has a channel opening and a conductor core filling the channel opening. A via stop layer is formed over the channel dielectric layer to have a hydrogen concentration below 15 atomic % and a via dielectric layer is formed over the via stop layer and has a via opening. A second channel dielectric layer over the via dielectric layer has a second channel opening. A second conductor core, filling the second channel opening and the via opening, is connected to the semiconductor device.
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申请公布号 |
US6593237(B1) |
申请公布日期 |
2003.07.15 |
申请号 |
US20020179047 |
申请日期 |
2002.06.24 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
NGO MINH VAN;WOO CHRISTY MEI-CHU |
分类号 |
H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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