发明名称 |
Attenuated rim phase shift mask |
摘要 |
An embodiment of the instant invention is a mask having a pattern which is transferred to a layer overlying a semiconductor wafer, the mask comprising: a transmissive portion (structure 102 of FIG. 1), the transmissive portion allowing energy which impinges upon the transmission portion to substantially pass through the transmissive portion; a substantially non-transmissive portion (structure 106 of FIG. 1); a semi-transmissive portion (structure 104 of FIG. 1) situated between the transmissive portion and the substantially non-transmissive portion, energy passing through the semi-transmissive portion having a phase; and wherein the phase of energy which passes through the semi-transmissive portion is out of phase with the phase of energy which passes through the transmissive portion. Preferably, the phase of the energy which passes through the semi-transmissive portion is around 180 degrees out of phase with energy which passes through the transmissive portion.
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申请公布号 |
US6593033(B1) |
申请公布日期 |
2003.07.15 |
申请号 |
US19990399840 |
申请日期 |
1999.09.21 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MA ZHILIU;YEN ANTHONY;GARZA CESAR |
分类号 |
G03F1/00;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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