发明名称 COMPOSITION OF ANTI-REFLECTIVE COATING AND PATTERN FORMING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME
摘要 PURPOSE: A composition of an anti-reflective coating and a pattern forming method of a semiconductor device using the same are provided to be capable of obtaining vertical pattern by containing thermal oxidation barrier material to the anti-reflective coating. CONSTITUTION: A composition of an anti-reflective coating comprises an anti-reflective coating compound and a thermal oxidation barrier material. Clariant 1C5D is used as the anti-reflective coating compound. Also, the thermal oxidation barrier material is one selected from group consisting of 2-hydrohexylparatoluensulfonate and 2-itrobenzylparatoluensulfonate.
申请公布号 KR20030059848(A) 申请公布日期 2003.07.12
申请号 KR20010087952 申请日期 2001.12.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HWANG, YEONG SEON;JUNG, JAE CHANG;LEE, GEUN SU;SHIN, GI SU
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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