发明名称 |
COMPOSITION OF ANTI-REFLECTIVE COATING AND PATTERN FORMING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME |
摘要 |
PURPOSE: A composition of an anti-reflective coating and a pattern forming method of a semiconductor device using the same are provided to be capable of obtaining vertical pattern by containing thermal oxidation barrier material to the anti-reflective coating. CONSTITUTION: A composition of an anti-reflective coating comprises an anti-reflective coating compound and a thermal oxidation barrier material. Clariant 1C5D is used as the anti-reflective coating compound. Also, the thermal oxidation barrier material is one selected from group consisting of 2-hydrohexylparatoluensulfonate and 2-itrobenzylparatoluensulfonate.
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申请公布号 |
KR20030059848(A) |
申请公布日期 |
2003.07.12 |
申请号 |
KR20010087952 |
申请日期 |
2001.12.29 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
HWANG, YEONG SEON;JUNG, JAE CHANG;LEE, GEUN SU;SHIN, GI SU |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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主权项 |
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地址 |
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