| 摘要 |
PURPOSE: A method for fabricating an avalanche photo diode is provided to form a floating guard ring by performing a zinc diffusion process once. CONSTITUTION: A u-InGaAs absorption layer, an InGaAsP grading layer, an n-Inp field buffer layer, and a u-InP amplification layer are grown on an n-InP substrate and an insulating layer is deposited thereon(S50). The insulating layer is partially removed and an etched portion is formed(S51). The insulating layer is removed to form a floating guard ring(S52). A zinc diffusion process is performed(S53). The insulating layer is removed and a p-type electrode is formed thereon(S54). A polishing process is performed(S55). A non-reflective coating process is performed and an n-type electrode are formed(S56). An avalanche photo diode is formed by cutting the substrate(S57).
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