| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to simplify a fabrication process and a fabricating cost by forming a charge storage electrode and a charge storage electrode contact without an additional process. CONSTITUTION: A lower layer including a conductive structure and an insulating structure is formed on a semiconductor substrate(10). A charge storage electrode contact hole is formed by etching selectively the insulating structure. A capacitor oxide layer is formed on an entire surface of the resultant. The charge storage electrode contact hole is opened by removing selectively the capacitor oxide layer of a cell region. A conductive layer(26) for a charge storage electrode is formed on the cell region. The inside of the charge storage electrode contact hole is filled with the conductive layer(26). A unit charge storage electrode is defined by etching selectively the conductive layer(26). A dielectric layer(28) and a conductive layer(29) for plate electrode are formed on the entire surface of the resultant.
|
