| 摘要 |
PURPOSE: A method for fabricating a half-tone photomask is provided to form correctly a pattern of a half-tone layer by removing an influence of a stepped portion due to a shielding layer. CONSTITUTION: A metal layer(2) is deposited on an upper quartz substrate(1). A photoresist is coated on the metal layer(2). A pattern is formed by exposing and developing the photoresist. A pattern of the metal layer(2) is formed by etching the exposed metal layer(2). The photoresist is removed. A half-tone material(4) is deposited on an upper surface of a lower quartz substrate(5). A photoresist is coated on an upper surface of the half-tone material(4). A photoresist pattern is formed by forming a pattern and performing a developing process. A pattern of the half-tone material(4) is formed on the upper surface of the lower quartz substrate(5) by etching the exposed half-tone material(4). The photoresist pattern is removed. The upper quartz substrate(1) is adhered on the lower quartz substrate(5) by sealant(6).
|
