METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of restraining the damage of a semiconductor substrate when carrying out an etching process for forming a contact pad and improving the cut-off characteristics of a transistor by preventing the leakage current of the transistor. CONSTITUTION: A plurality of gate electrodes(110) are formed on a semiconductor substrate(100). The first impurity region is formed at both sides of the gate electrode in the semiconductor substrate. A spacer(112) is formed at both sidewalls of the gate electrode. The second impurity region is formed between spacers in the semiconductor substrate. An interlayer dielectric(116) is formed on the entire surface of the resultant structure. Then, a dry etching process is carried out for selectively removing the interlayer dielectric. A wet etching process is carried out at the exposed spacer. An ion implantation is carried out at the resultant structure.