| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a solid-state image pickup elements, which makes field strength in the horizontal direction of a semiconductor substrate to be large and that of a depth direction to be small so that a high light sensitivity is obtained. SOLUTION: Arsenic ions are injected on a P<SP>-</SP>-type charge discharge control layer 13 and the arsenic ions are thermally diffused by heating. The conditions of ion injection and annealing are suitably selected so that a moderate impurity profile in the depth direction in the semiconductor substrate 11 is formed. Then, an N-type charge accumulation layer 14 constituting a part of the deep part of the photoelectric conversion part 10A is formed. Then, a P-type charge transfer lower layer 15, an N-type charge transfer layer 16 and a P-type pixel separation layer 17 are sequentially formed. A charge transfer electrode 18 is formed on the N-type charge transfer layer 16. Heating is necessary at that time but the condition is suitably selected when forming the N-type charge accumulation layer 14, so that impurity diffusion equally occurs in the horizontal direction and the depth direction of the semiconductor substrate 11. COPYRIGHT: (C)2003,JPO
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