| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which an epitaxial wafer that has a highly flat surface and high cleanliness and is low in particle level can be manufactured. SOLUTION: After etching the surface of a silicon wafer, the etched surface of the wafer is cleaned with an SC-1 cleaning fluid. Then the cleaned wafer is dipped in an HF solution. After taking out the wafer from the HF solution, epitaxial growth is performed on the surface of the wafer by adjusting the duration of leaving the wafer in the atmosphere for eight hours or shorter. The epitaxial growth can be performed at a high temperature of≥1,000°C or a low temperature of 400°C to≤1,000°C or the epitaxial growth can be repeated alternately at the high temperature and low temperature. When the epitaxial growth is performed at the low temperature, the cost of the epitaxial growth can be reduced due to the low temperature. In addition, the epitaxially grown surface can be polished. COPYRIGHT: (C)2003,JPO
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