| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which low ON voltage characteristics can be attained without sacrifice of fabrication efficiency. SOLUTION: The semiconductor device comprises a semiconductor substrate 1 of first or second conductivity type, a semiconductor layer 2 of second conductivity type formed on the surface of the semiconductor substrate, a base layer 3 of first conductivity type formed on the semiconductor layer, an emitter layer 4 of second conductivity type formed partially on the surface of the base layer 3, a gate electrode 6 formed to touch the semiconductor layer 2, the base layer 3, and the emitter layer 4 through a gate insulation film 5, an emitter electrode 9 formed to touch the base layer 3 and the emitter layer 4, and a collector electrode 10 formed on the rear surface of the semiconductor substrate 1 wherein the gate electrode 6 has an upper surface substantially defined by a linear region 11 and a curve region 12 with a plurality of linear regions being connected in at least one curve region. COPYRIGHT: (C)2003,JPO
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