| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor conductive layer for forming a resist pattern in good accuracy in which acid generated from a chemical amplification resist film is not consumed by a metal brought into contact with the acid. <P>SOLUTION: The method for forming the semiconductor conductive layer comprises steps of forming a first metal film (2) made of copper on a semiconductor substrate (1), then laminating a resist barrier layer (3) chemically stable for an acid, and forming a chemical amplification resist film (4) in a state brought into contact with the layer (3). The method further comprises steps of forming a first resist film (4a) and a second resist film (4b) of the film (4) having different solubilities due to exposure, and removing the film (4a) with a developer to form a resist pattern. The method also comprises steps of forming a second metal film (5) on an exposed surface (2a) of the first metal film (2) in which the exposed layer (3) is removed by etching, finally removing the film (4b) and the layer (3) and the film (2) coated by the film (4b), and thereby exposing the substrate (1). <P>COPYRIGHT: (C)2003,JPO |
