| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a field emission electron source capable of increasing the stability of electron emission characteristics with elapse of time and reducing a production cost. <P>SOLUTION: A porous polycrystal silicon layer 4 having a large number of silicon fine crystals provided between the grains of polycrystal silicon is formed by making porous the polycrystal silicon layer 3 on a lower electrode 12 formed of an n-silicon substrate 1 and an ohmic electrode 2 by anodizing. In an insulation film forming process, an insulation film is formed on the surfaces of grains and silicon fine crystals to form a strong field drift layer 6. Next, a surface electrode 7 is formed on the strong field drift layer 6. In the insulation film forming process, oxidized film is formed on the surfaces of the grains and silicon fine crystals by a rapid thermal oxidation method, and the film quality of the oxidized film is improved by a rapid thermal nitriding method. In the rapid thermal oxidation method and the rapid thermal nitriding method, a heat treatment time is shortened to such a degree that the occurrence of damage to the silicon fine crystals can be suppressed. <P>COPYRIGHT: (C)2003,JPO</p> |
