| 摘要 |
PROBLEM TO BE SOLVED: To make wide the current setting permissible range for writing that an information storage device having a plurality of information storage elements storing information by using magneto-resistance effect and to make the elements fine. SOLUTION: The information storage device 1 which has the plurality of information storage elements 31 storing information by using magneto-resistance effect on a substrate has word lines 11 arranged below between the respective information storage elements 31 and a method for writing the information to this information storage device 1 is characterized by that currents are applied to two word lines 11 and 11 arranged across a lower area of the information storage elements 31 in the same direction and the information is written to the information storage elements 31 with a composite magnetic field produced by the two word lines 11 and 11. COPYRIGHT: (C)2003,JPO
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