MASK LAYER AND DOUBLE DAMASCENE INTERCONNECTING STRUCTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for forming an interconnecting structure capable of preventing a size of a via from being reduced even when a trench is misaligned. SOLUTION: A mask layer 57 having four mask films is used. The first mask film 58 and the third mask film 60 have virtually equal etching rates. The second mask film 59 and the fourth mask film 61 have virtually equal etching rates, which are different from those of the first and the third mask films. The via is etched in the first mask film. Then etching of the trench is performed on the third mask film of the mask layer. The via and the trench are then etched in a dielectric material. The second, the third and the fourth mask films are removed while the first mask film remains as a passivation layer for the dielectric material. COPYRIGHT: (C)2003,JPO