| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming wiring by which no lack of film occurs even when the aspect ratio of a connection hole is above 1. SOLUTION: The method for manufacturing a semiconductor device has a step of forming an insulating film 22 on a substrate 21, a step of forming connection holes 23 exhibiting aspect ratios above 1 in the insulating film 22, a step of forming a conductive film 25 on the substrate 21 by a sputtering method, a step of covering the whole inner surfaces of the connection holes 23 with the conductive film 25 by sputter-etching the surface of the conductive film 25 by subjecting the substrate 21 to plasma and a step of forming wiring by processing the conductive film 25. COPYRIGHT: (C)2003,JPO
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