| 摘要 |
PROBLEM TO BE SOLVED: To inexpensively provide a delta doping technique by which the occurrence of a punch-through phenomenon that becomes a problem at the time of refining a MOSFET can be prevented and, in addition, the characteristics of a device are not sacrificed. SOLUTION: The purpose is achieved by segregating phosphorus atoms injected into a semiconductor substrate to the surface of the substrate, and utilizing the surface layer of the substrate as a delta-doped layer. The segregation means that the phosphorus atoms are distributed near the surface of the substrate at a concentration higher than that of the phosphorus atoms distributed inside the substrate. COPYRIGHT: (C)2003,JPO
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