发明名称 DRIVE METHOD FOR SEMICONDUCTOR LASER MODULE
摘要 PROBLEM TO BE SOLVED: To provide a drive method for a semiconductor laser module, which prevents an excessive thermo module current from flowing in the heating direction of a thermo module, and can avoid troubles due to the excessive thermo module current. SOLUTION: When a thermo module current Itec that is energized to a thermo module 5 to set a semiconductor laser element 2 to a desired temperature is adjusted based on a temperature T (a thermistor indication temperature Ts) of the semiconductor laser element 2, the maximum allowable current value Itex (max) in the heating direction of the thermo module current when the semiconductor laser element 2 reaches a specific maximum temperature T (max) is calculated based on a drive current Iop of the semiconductor laser element 2 and an environment temperature Tc of a semiconductor laser module 1, and the level of the thermo module current Itec is limited to the maximum allowable current value Itec (max) or less. As a result, the temperature T of the semiconductor laser element 2 does not exceed the set maximum temperature T (max). COPYRIGHT: (C)2003,JPO
申请公布号 JP2003198040(A) 申请公布日期 2003.07.11
申请号 JP20010390420 申请日期 2001.12.21
申请人 FURUKAWA ELECTRIC CO LTD:THE 发明人 IIDA KAORU;OKADA TAKAHIRO;KOSEKI TAKASHI
分类号 F25B21/02;H01L23/373;H01L35/08;H01L35/28;H01S5/022;H01S5/024;H01S5/042;(IPC1-7):H01S5/024 主分类号 F25B21/02
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