| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for producing a thin film transistor in which electrostatic breakdown is prevented by irradiating a glass substrate with light in a step performing attraction/stripping thereof thereby obtaining a protective circuit equivalent to a protective element circuit. <P>SOLUTION: When strip charging of a glass substrate occurs and a voltage is discharged or enters abruptly from the ground in the vicinity of the glass substrate, a potential difference is generated between a gate line and a drain line to cause electrostatic breakdown between them. A semiconductor film of a-Si, for example, has a resistance of about 1E+14Ωwhen it is not irradiated with light but exhibits a resistance of about 1E+11Ωwhen it is irradiated with light. When the glass substrate is stripped while being irradiated with light, a potential entering from the outside is distributed laterally through a semiconductor layer and the internal element is protected against electrostatic breakdown. <P>COPYRIGHT: (C)2003,JPO</p> |
