| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor substrate having a single-crystal semiconductor layer which has an SOI structure free of peeling of a single-crystal silicon layer and is partially different in thickness, the semiconductor substrate, an electrooptic device and electronic equipment. <P>SOLUTION: A stuck substrate 600 has an ion shielding mask 300a formed on the surface of a silicon substrate 200 and oxygen ions 400 are implanted. Consequently, a silicon oxide film 210 is formed around an arrival peak position of the oxygen ions 400 in the single-crystal silicon substrate 200 and a thin 1st single-crystal semiconductor layer 220 is left on the top layer side of the silicon oxide film 210. At a part covered with the ion shielding mask 300a, on the other hand, a thick 2nd single-crystal semiconductor layer 230 is formed. <P>COPYRIGHT: (C)2003,JPO</p> |
