| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable the fine inspection of elements constituting one bit in an SRAM. <P>SOLUTION: In a memory cell, two inverters INV1 and INV2 are constituted of four transistors 1, 2, 3 and 4, and two transistors 5, 6 are made to be selective transistors. Wirings 31-34 of other systems are arranged on each of high voltage side and low voltage side terminals (for Vdd1, for GND1) of the first inverter INV1 and on each of high voltage side and low voltage side terminals (for Vdd2, for GND2) of the second inverter INV2, in the respective memory calls. Wirings 40, 41, 42 and 43 for inspecting the transistors are arranged which are connected with drains of the selective transistors 5, 6, respectively. <P>COPYRIGHT: (C)2003,JPO |
