| 摘要 |
<P>PROBLEM TO BE SOLVED: To make the outer shape of the entire semiconductor device small and thin by enabling a support substrate for supporting semiconductor circuit elements to be processed as thin as the semiconductor circuit elements. <P>SOLUTION: A method of manufacturing an SIP semiconductor device 100 comprises processes of forming openings 35A and 35B consistent in size with semiconductor ICs 15A and 15B in one face of a semiconductor wafer 1, setting the semiconductor ICs 15A and 15B in the openings 35A and 35B, forming an Al film on the opening-formed face 5 of the semiconductor wafer 1 wherein the semiconductor ICs 15A and 15B are set, processing the Al film into a prescribed shape to form a re-interconnection layer 20 extended at least to the semiconductor ICs 15A and 15B, and grinding the other face of the semiconductor wafer 1 opposite to the opening-formed face 5 where the re-interconnection layer 20 is formed. By this method, the semiconductor wafer 1 can be processed as thin as the semiconductor ICs 15A and 15B. <P>COPYRIGHT: (C)2003,JPO |
