发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE EQUIPPED WITH METALLIC SUBSTRATE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which a metallic substrate is provided to improve reliability and service life of the semiconductor device by its high thermal conductivity. <P>SOLUTION: This method of manufacturing the semiconductor device equipped with the metallic substrate includes at least following steps: providing a semiconductor substrate as a temporary substrate; forming at least one semiconductor layer on the semiconductor substrate; forming the metallic substrate on the semiconductor layer, and removing the semiconductor substrate finally. The high thermal conductivity of the metallic substrate improves the reliability and service life of the semiconductor device. <P>COPYRIGHT: (C)2003,JPO |
申请公布号 |
JP2003197980(A) |
申请公布日期 |
2003.07.11 |
申请号 |
JP20010383146 |
申请日期 |
2001.12.17 |
申请人 |
SHURAI KAGI KOFUN YUGENKOSHI |
发明人 |
CHIN DAIKEN;GO HAKUJIN;SHU GENKIN;EKI DAIKAN;CHIN KENAN |
分类号 |
C23C28/00;H01L33/10;H01L33/26 |
主分类号 |
C23C28/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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