| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a composition for polishing to be used for a CMP process which has a good selectivity in that a polishing rate for copper is large while that for a tantalum compound is small in a CMP process of a semiconductor device having a copper film and a tantalum compound, and which is capable of making the surface of the copper film smooth. <P>SOLUTION: The composition for polishing comprises (A) a polishing substance, (B) quinoxaline and/or quinazoline, (C) organic acid, (D) hydrogen peroxide, and (E) water. The polishing substance is formed of an organic high molecular compound with an average grain diameter of 5 to 100 nm, and the concentration of the polishing substance in the composition for polishing is 1 to 30 wt.%. The concentration of the (B) component in the composition is 0.01 to 5 wt.%, that of the organic acid is 0.05 to 5 wt.%, and that of hydrogen peroxide is 0.03 to 5 wt.%. <P>COPYRIGHT: (C)2003,JPO</p> |
