| 摘要 |
PROBLEM TO BE SOLVED: To simplify the structure of a driving circuit for selecting an image pickup pixel. SOLUTION: A MOS transistor 12 is provided between a driving scanner 11 of a pixel selection signal line 15 and an image pickup pixel 14, and a scan pulse of the driving scanner 11 is supplied to its gate. A high resistance element 13 is provided between the MOS transistor 12 and the image pickup pixel 14. When the MOS transistor 12 is made conductive by the scan pulse of the driving scanner 11, a voltage signal from a first power source VDD is supplied as a pixel selection signal from the pixel selection signal line 15 to the image pickup pixel 14. When a route from the first power source VDD to the image pickup pixel 14 falls into the non-conductive state by making the MOS transistor 12 non-conductive, the pixel selection signal line 15 is connected to the ground (GND) through the high resistance element 13 and is kept in high-impedance, and thus the non-selected state of the image pickup pixel 14 is realized. COPYRIGHT: (C)2003,JPO
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