| 发明名称 |
METHOD OF MANUFACTURING CRYSTALLINE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of easily manufacturing a crystalline semiconductor film which is uniform in properties and a semiconductor device. <P>SOLUTION: This semiconductor device is equipped with an active region formed of a crystalline silicon film which is formed by irradiating an amorphous silicon film with a laser beam. The crystalline silicon film can be obtained by obliquely irradiating the amorphous silicon film with a laser beam while the laser beam is scanning in the direction of an arrow A. <P>COPYRIGHT: (C)2003,JPO</p> |
| 申请公布号 |
JP2003197523(A) |
申请公布日期 |
2003.07.11 |
| 申请号 |
JP20010394639 |
申请日期 |
2001.12.26 |
| 申请人 |
SHARP CORP;NAKAO MASAYUKI;HATAMURA YOTARO |
发明人 |
NAKAGAWA KAZUO;NAKAO MASAYUKI;HATAMURA YOTARO |
| 分类号 |
G02F1/1368;H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/20;G02F1/136 |
主分类号 |
G02F1/1368 |
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