CONTINUOUS ANTIFUSE MATERIAL IN MEMORY STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a memory structure comprising an antifuse material and a forming method for the antifuse materials which can reduce electric short circuits in an antifuse structure and shorten the time and processes needed to manufacture the memory structure. SOLUTION: The memory structure (700) has the antifuse material (16) that is unpatterned and sandwiched between each of a plurality of antifuse electrode pairs. The antifuse material is continuous between the antifuse electrode pairs. COPYRIGHT: (C)2003,JPO