| 摘要 |
PROBLEM TO BE SOLVED: To improve controllability for an etching process, crystallinity at the time of regrowth and luminous efficiency in a surface emitting laser element of a selective oxidation current constrictive with a controlling system in an oxidation shape by arranging each semiconductor layer with different compositions in a current path and an oxidation area by means of etching and regrowth. SOLUTION: In the surface emitting laser element wherein an Al<SB>x1</SB>Ga<SB>1-x1</SB>As mixed crystal in an area to be the current path is removed by etching after performing crystal growth of the Al<SB>x1</SB>Ga<SB>1-x1</SB>As mixed crystal to be a selective oxidation layer to oxidize the selective oxidation layer by performing regrowth of an Al<SB>x2</SB>Ga<SB>1-x2</SB>As mixed crystal smaller than this in an Al composition in an etching area, an Al<SB>x3</SB>Ga<SB>1-x3</SB>As further smaller than the Al<SB>x1</SB>Ga<SB>1-x1</SB>As mixed crystal in the Al composition is arranged under the Al<SB>x1</SB>Ga<SB>1-x1</SB>As mixed crystal to be the selective oxidation layer. COPYRIGHT: (C)2003,JPO
|
