| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystalline semiconductor film which has little crystal defects and crystal grains large in grain diameter and nearly uniform in crystal orientation. SOLUTION: In this semiconductor film forming method, an amorphous silicon film 41 is formed on a glass board 40, energy is given to the amorphous silicon film 41 so as to melt it, and the molten amorphous silicon film 41 is crystallized into the crystalline silicon film 41. This forming method comprises a first process of forming the amorphous silicon film 41 whose hydrogen concentration is 10 to 20 at.% on the glass board 40, a second process of introducing a catalytic substance promoting crystallization of the amorphous silicon film 41, and a third process of feeding energy to the amorphous silicon film 41 loaded with the catalytic substance. COPYRIGHT: (C)2003,JPO
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