发明名称 METHOD FOR DEVICE SIMULATION AND APPARATUS FOR DEVICE SIMULATION
摘要 PROBLEM TO BE SOLVED: To provide a device simulating apparatus, which is capable of predicting the electrical properties of a device with high precision without deteriorating its physical precision. SOLUTION: This device simulation apparatus is equipped with a pre- processing unit 1, a model comparison unit 2, a comparison result table 3, a model selection unit 4, and a simulation execution unit 5. The model selection unit 4 compares the contact resistance calculated through a Schottky electrode model with a contact resistance calculated through a contact resistance model. When it is found that the resistance difference between the above contact resistances is below a prescribed value, a device simulation is conducted, taking the contact resistance calculated through the contact resistance model into consideration, so that electrical properties can be predicted more quickly, without deteriorating their accuracy through this simulation than through another simulation in which the Schottky electrode model is used. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003197494(A) 申请公布日期 2003.07.11
申请号 JP20010397233 申请日期 2001.12.27
申请人 TOSHIBA CORP 发明人 MATSUZAWA KAZUYA
分类号 H01L21/28;G06F17/50;H01L21/00;H01L21/02;H01L21/336;H01L29/78;(IPC1-7):H01L21/00 主分类号 H01L21/28
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