发明名称 SEMICONDUCTOR DEVICE EQUIPPED WITH MULTI-LAYER WIRING STRUCTURE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device capable of effectively relaxing stress by the heat-shrinking of a package applied to a wiring layer of multi-layer structure and preventing the occurrence of a crack of a passivation film which is a film to protect a chip, or the like. SOLUTION: In the semiconductor device equipped with the multi-layer wiring structure in which lower layer wiring 13 and upper layer wiring 15 are formed on a semiconductor board 11 with an interlayer insulation film 14 between, the purpose is achieved by the semiconductor device equipped with the multi- layer wiring structure, which is characterized in that an opening in an interlayer insulation film 14 is made small to provide a wider area of the interlayer insulation film 14. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003197736(A) 申请公布日期 2003.07.11
申请号 JP20010398857 申请日期 2001.12.28
申请人 MITSUMI ELECTRIC CO LTD 发明人 TAKANO YOICHI
分类号 H01L21/768;(IPC1-7):H01L21/768 主分类号 H01L21/768
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