| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which damage to a lower unit device due to plasma induction can be reduced during a contact step for coupling the lower unit device and upper metal wiring. SOLUTION: The method for manufacturing a semiconductor device has a step of forming a word line/substrate etch stopping layer 220 on word lines 22 formed on a semiconductor substrate, a step of forming a bit line etch stopping layer 240 on a bit line 24 formed on a first interlayer insulating film 23, a step of forming a capacitor etch stopping layer 260 on a capacitor 26 formed on a second interlayer insulating film 25, a step of etching the interlayer insulating films by using a photoresist pattern 28 as an etching mask, a step of forming a third interlayer insulating film 27, a step of forming contact holes C1, C2, C3 and C4 whose bottoms are constituted of the etch stopping layers and a step of completing the contact holes by removing the etch stopping layers exposed in the bottoms of the contact holes. COPYRIGHT: (C)2003,JPO
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