发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To improve cooling efficiency of a cooling chamber. SOLUTION: A multi-chamber CVD device is equipped with a CVD chamber 14, which thermally treats wafers 1 and a cooling chamber 33 which are connected continuously together and arranged around a transfer chamber 11, in which a wafer transfer unit 9 is installed. A wafer-rotating unit 35 which rotates three holders 44 each being held by vacuum suction a wafer 1 kept at a high temperature is provided inside the cooling chamber 33, a cooling gas supply tube 50 which supplies nitrogen gas 51 and an exhaust tube 52 are connected to the opposed sidewalls of the cooling chamber 33 perpendicular to the rotating shaft. Therefore, nitrogen gas is made to blow against the wafers 1, while the wafers 1 are rotated by the wafer-rotating unit 35, so that heat released from the wafers 1 can be absorbed by fresh cooled nitrogen gas, nitrogen gas is agitated to relax thermal interference by the following wafers with the preceding wafers, and the wafers are improved in cooling efficiency, and the multi- chamber CVD device can be improved in throughput as a whole. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003197497(A) 申请公布日期 2003.07.11
申请号 JP20010400348 申请日期 2001.12.28
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 HIRANO AKITO
分类号 H01L21/31;H01L21/02;(IPC1-7):H01L21/02 主分类号 H01L21/31
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