发明名称 THIN FILM CAPACITOR AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a thin film capacitor, in which the electrode losses of lower and upper electrode layers are reduced, and in addition, the projected planar area of a capacitance generating region can be formed with accuracy. SOLUTION: This thin film capacitor is constituted by successively forming the lower electrode layer 2, a thin film dielectric layer 3, and the upper electrode layer 4 on a support substrate 1. In this capacitor, the thin dielectric film layer 3 exists only immediately under the upper electrode layer 4, and the electrode layers 3 and 4 have the same shape and the same planar area. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003197464(A) 申请公布日期 2003.07.11
申请号 JP20010395376 申请日期 2001.12.26
申请人 KYOCERA CORP 发明人 MISHIMA TSUNEO
分类号 H01G4/33;H01L21/822;H01L27/04;(IPC1-7):H01G4/33 主分类号 H01G4/33
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