发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT, MANUFACTURING METHOD FOR THE SEMICONDUCTOR INTEGRATED CIRCUIT, SEMICONDUCTOR ELEMENT MEMBER, ELECTROOPTIC DEVICE, AND ELECTRONIC EQUIPMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit which improves the use rate of a semiconductor substrate where a semiconductor element is formed and decreases waste of manufacturing processes for the integrated circuit, a manufacturing circuit for the semiconductor integrated circuit, a semiconductor element member, an electrooptic device, and electronic equipment. <P>SOLUTION: On the substrate 10 of a semiconductor, a semiconductor device (semiconductor element) 13 is formed and only a function layer 12 which is a surface layer on the substrate 10 and includes the semiconductor device (semiconductor element) 13 is cut into fine tiles apart from the substrate 10. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003197881(A) 申请公布日期 2003.07.11
申请号 JP20010398200 申请日期 2001.12.27
申请人 SEIKO EPSON CORP 发明人 KONDO TAKAYUKI
分类号 H01L21/331;H01L21/02;H01L21/20;H01L21/306;H01L21/336;H01L21/338;H01L21/60;H01L27/12;H01L27/15;H01L29/737;H01L29/778;H01L29/786;H01L29/812;H01L51/52 主分类号 H01L21/331
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