发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT, MANUFACTURING METHOD FOR THE SEMICONDUCTOR INTEGRATED CIRCUIT, SEMICONDUCTOR ELEMENT MEMBER, ELECTROOPTIC DEVICE, AND ELECTRONIC EQUIPMENT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit which improves the use rate of a semiconductor substrate where a semiconductor element is formed and decreases waste of manufacturing processes for the integrated circuit, a manufacturing circuit for the semiconductor integrated circuit, a semiconductor element member, an electrooptic device, and electronic equipment. <P>SOLUTION: On the substrate 10 of a semiconductor, a semiconductor device (semiconductor element) 13 is formed and only a function layer 12 which is a surface layer on the substrate 10 and includes the semiconductor device (semiconductor element) 13 is cut into fine tiles apart from the substrate 10. <P>COPYRIGHT: (C)2003,JPO |
申请公布号 |
JP2003197881(A) |
申请公布日期 |
2003.07.11 |
申请号 |
JP20010398200 |
申请日期 |
2001.12.27 |
申请人 |
SEIKO EPSON CORP |
发明人 |
KONDO TAKAYUKI |
分类号 |
H01L21/331;H01L21/02;H01L21/20;H01L21/306;H01L21/336;H01L21/338;H01L21/60;H01L27/12;H01L27/15;H01L29/737;H01L29/778;H01L29/786;H01L29/812;H01L51/52 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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