发明名称 SURFACE ACOUSTIC WAVE DEVICE AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a surface acoustic wave device and its manufacturing method for reducing an insertion loss, superior in weather resistance, and for reducing the cost. <P>SOLUTION: An interdigital electrode 1b is provided on a piezoelectric substrate 1a. A function film 4 composed of at least one type selected from a silicon nitride film, a silicon oxide film, and an oxynitride film is formed on at least one part of the interdigital electrode 1b by an ECR sputtering method. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003198321(A) 申请公布日期 2003.07.11
申请号 JP20020264163 申请日期 2002.09.10
申请人 MURATA MFG CO LTD 发明人 ARAKI NOBUNARI
分类号 H01L41/09;H01L41/18;H01L41/22;H01L41/23;H03H3/08;H03H9/02;H03H9/145;H03H9/25 主分类号 H01L41/09
代理机构 代理人
主权项
地址