| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the deterioration of electrical characteristics due to the inflow of brazing materials such as solder to the mesa groove of a semiconductor device having the mesa groove. <P>SOLUTION: As for a semiconductor device as a diode, a dam groove (16) having depth does not reach the pn junction of semiconductor areas (2-4) is circularly formed on one main surface (1a) of a semiconductor substrate (1) between the mesa groove (5) and a cathode electrode layer (6). At the time of fixing the first lead electrode (9) to a cathode electrode layer (6) by solder (8), the solder (8) flowing out from an clearance between the cathode electrode layer (6) and a first main surface (11a) of a header (11) of a first lead electrode (9) is dammed back by the dam groove (16), so that the inflow of the solder (8) electrically connecting the cathode electrode layer (6) to the header (11) of the first lead electrode (9) to the mesa groove (5) can be prevented. Therefore, the thermal stress of the solder (8) can be prevented from being added to the junction of the semiconductor areas (2-4) configuring the semiconductor substrate (1), and the deterioration of any electric characteristics such as the breakdown strength of the diode can be prevented. <P>COPYRIGHT: (C)2003,JPO |
