| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser diode capable of operating at a high output with high reliability for a long time. SOLUTION: The LD 10 is a ridge waveguide LD and comprises a multilayer structure formed on an n-GaAs substrate 12. The multilayer structure comprises an n-Al<SB>0.3</SB>GaAs lower clad layer 14, non-doped Al<SB>0.2</SB>GaAs lower SCH layer 16, non-doped Al<SB>0.1</SB>GaAs lower barrier layer 17, InGaAsN active layer 18 of a multiple quantum well structure, non-doped Al<SB>0.1</SB>GaAs upper barrier layer 19, non-doped Al<SB>0.2</SB>GaAs upper SCH layer 20, p-Al<SB>0.3</SB>GaAs upper clad layer 22, and p-GaAs cap layer 24. An upper part of the upper clad layer and the cap layer have a ridge waveguide structure of a stripe geometry. The In<SB>1-x</SB>Ga<SB>x</SB>As<SB>y</SB>N<SB>1-y</SB>quantum well layer has mole fractions of 0.1 for x and 0.005 for 1-y. COPYRIGHT: (C)2003,JPO
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