发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To easily obtain a body contact while reducing the magnitude of parasitic resistance on a source side and suppressing the change of a pinch-off point. SOLUTION: A P<SP>-</SP>type impurity layer 7 for threshold value control is formed only near to the source side of the channel region while an N<SP>-</SP>impurity layer 6 is formed only on a drain side. Furthermore, the N<SP>-</SP>impurity layer 6 and an N<SP>+</SP>impurity layer 10 are formed so as to reach an insulating layer 1, and the P<SP>-</SP>type impurity layer 7 and N<SP>+</SP>impurity layer 8 are formed so as to be separated from the insulating layer 1. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003197634(A) 申请公布日期 2003.07.11
申请号 JP20010395208 申请日期 2001.12.26
申请人 ASAHI KASEI MICROSYSTEMS KK 发明人 KOBAYASHI TAKAAKI
分类号 H01L21/336;H01L29/786;(IPC1-7):H01L21/336 主分类号 H01L21/336
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