发明名称 METHOD AND APPARATUS FOR TREATING SUBSTRATE SURFACE
摘要 PROBLEM TO BE SOLVED: To diffusibly introduce processing gas while dispersing the gas, by making use of the porousness of a ceramic body, homogenize the processing gas in a vessel, homogenize the density of plasma generated in a vessel by the homogenization of the processing gas in the vessel, reduce processing unevenness on the surface of a substrate for raising processing quality, and improve workability by enhancing processing speed. SOLUTION: A device for treating the substrate surface is provided with the vessel 1 for introducing the processing gas G through a gas introducing portion 2, a pair of electrodes 4, 5 which are disposed opposite to each other at the inside and outside of the vessel 1, respectively, a plasma generator 7 for generating plasma P in the vessel 1 by impressing an electric field between the pair of electrodes 4, 5, an outlet 3 for discharging the plasma P generated in the vessel 1 to the surface of the substrate to be treated, which is located outside of the vessel 1, and the ceramic body 9 for permitting the processing gas G which is introduced from the portion 2 into the vessel 1 to pass therethrough. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003197606(A) 申请公布日期 2003.07.11
申请号 JP20010390316 申请日期 2001.12.21
申请人 MTJ:KK 发明人 UMETANI MASAAKI
分类号 G02F1/13;B05D3/04;G02F1/1333;H01L21/302;H01L21/304;H01L21/3065;(IPC1-7):H01L21/306;G02F1/133 主分类号 G02F1/13
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