| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that easy manufacturing of a semiconductor light emitting element having high light emitting efficiency is difficult. <P>SOLUTION: A semiconductor region 2 containing an n-type clad layer 7, and active layer 8, and a p-type clad layer 9 is provided on a substrate 1. Then an AlGaAs first contact layer 12 having a thickness of 0.01 μm and a GaAs second contact layer 13 having a thickness of 0.01 μm are provided on the semiconductor region 2. In addition, a current blocking layer 4 is provided on the central part of the surface of the second contact layer 13, and a pad portion 5a of a first electrode 5 is provided on the layer 4. Moreover, the narrow portion 5b of the first electrode 5 is provided on the second contact layer 13. The first electrode 5 is constituted of a first metallic layer 14 composed of titanium which does not form alloy with the contact layer 13 and a second metallic layer 15 composed of highly bondable gold. <P>COPYRIGHT: (C)2003,JPO |
