| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a highly reliable semiconductor element equipped with a shot key barrier electrode. SOLUTION: A Ti layer and a Pd layer are successively formed on a semiconductor substrate 12. Then, the Pd is diffused through the Ti layer in the surface area of the semiconductor substrate 12 in order to leave the Pd on the Ti layer by heat treatment so that a first metallic layer 19 made of Pd silicide can be formed. Simultaneously, the Ti layer is made into silicide by the diffusion of Si from the semiconductor substrate 12. Then, the Al layer is formed on the Ti layer where the Pd remains, and heat treatment is carried out. Thus, a fourth metallic layer 22 made of Ti, Al, and Si is formed on the boundary of the Ti layer and the Al layer, and the Pd is diffused (added) in the Al layer. The thermal treatment is carried out in order to make the Pd layer on the Ti layer disappear so that a shot barrier electrode 13 where the fourth metallic layer 22 and the third metallic layer (Al layer) 21 including the Pd are successively laminated can be formed on the second metallic layer (Ti silicide layer) 20. COPYRIGHT: (C)2003,JPO |
