SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which can suppress leak current and improve characteristics of a device.

SOLUTION: The semiconductor device has a 1st semiconductor layer 33 which is formed on a base substrate 31 across an buried oxide layer 32 and a 2nd semiconductor layer 34 which is formed on the base substrate and also has a 1st element formed in the 1st semiconductor layer and a 2nd element in the 2nd semiconductor layer. Then the interface JS between the base substrate and 2nd semiconductor layer is substantially in level with the reverse surface of the buried oxide layer or deeper than the buried oxide layer. An active area of the 2nd element can be formed avoiding the interface between the base substrate and 2nd semiconductor layer, so leak current can be suppressed and characteristics of a device can be improved.

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