| 摘要 |
<P>PROBLEM TO BE SOLVED: To connect a part between a pair of mutual diffusion regions which are isolated by an isolation region, by not arranging a contact but using a wiring layer. <P>SOLUTION: This semiconductor device is provided with an n-channel first transistor 15 having an n-type diffusion region 17 and a p-channel second transistor 16 having a p-type diffusion region 19 which are formed on a substrate 11 isolated from each other, an STI 14 for isolating the first and second transistors 15, 16, a slit 36 arranged in the STI 14, a polysilicon film 38 arranged on an inner wall of the slit 36, and a wiring layer which is constituted of first and second parts 22a, 22b of a wiring layer 22 which are electrically connected with the n-type and p-type diffusion regions 17, 19, and a third part 22c of the wiring layer 22 which part is formed on the STI 14 along the slit 36 and collectively formed in an unified body with the first and second parts 22a, 22b. <P>COPYRIGHT: (C)2003,JPO |
